2N5551TA

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The 2N5551TA transistor is a versatile component that can be used in a variety of electronic applications. Its NPN polarity and 160V collector emitter voltage (V(br)ceo) make it suitable for use in both analog and digital circuits. With a transition frequency (ft) of 100MHz, this transistor can handle high-frequency signals with ease, making it ideal for applications such as RF amplification and high-speed switching. The power dissipation (Pd) of 625mW and DC collector current of 600mA indicate that it can handle moderate power levels without overheating. The DC current gain (hFE) of 30hFE ensures that the transistor provides adequate current amplification. The TO-92 case style with 3 pins allows for easy installation and connection in various circuit layouts. The operating temperature range of -55°C to 150°C makes it suitable for use in harsh environmental conditions. Additionally, the absence of any Substances of Very High Concern (SVHC) as of 27-Jun-2018 demonstrates its environmental compliance